具有后微接触c-Si//spl μ /c-Si:H异质结构的23.5%高效硅太阳能电池

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI:10.1109/PVSC.1997.654077

S. Okamoto, M. Nishida, T. Shindo, Y. Komatsu, S. Yasue, M. Kaneiwa, T. Nanmori

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引用次数: 8

摘要

为了获得高效率的硅太阳能电池，我们研究了由p型单晶硅(c-Si)衬底和高硼掺杂(p/sup +/)氢化微晶硅(/spl mu/c-Si:H)薄膜组成的后部异质结构。这种异质结构是通过在衬底后表面打开SiO/ sub2 /薄膜的后微接触形成的。利用该异质结构制备的BSF有效地改善了Voc。通过手指电极图案的优化设计，在5/spl次/5 cm/sup 2/面积下，单晶硅太阳能电池的转换效率达到23.5% (AM1.5, 25/spl℃，100 mW/cm/sup 2/)。

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23.5% efficient silicon solar cell with rear micro contacts of c-Si//spl mu/c-Si:H heterostructure

To obtain high efficiency silicon solar cells, we have investigated the rear heterostructure comprising a p-type single crystalline silicon (c-Si) substrate and a highly boron doped (p/sup +/) hydrogenated microcrystalline silicon (/spl mu/c-Si:H) film. This heterostructure was formed by rear micro contacts where a SiO/sub 2/ film was opened on the rear surface of the substrate. Voc was improved by an effective BSF using this heterostructure. With optimal design of finger electrode patterns, a conversion efficiency of 23.5% (AM1.5, 25/spl deg/C, 100 mW/cm/sup 2/) was obtained for a single crystalline silicon solar cell in 5/spl times/5 cm/sup 2/ area.

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Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

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