{"title":"用于4G应用的功率放大器上的可调集成输出阻抗变压器","authors":"Y. Jato, A. Herrera, G. De Astis, F. Huin","doi":"10.1109/MWSYM.2013.6697421","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a modified Ruthroff-type transmission line transformer with tuning capability. The variation of a capacitor included in the structure allows the output impedance of a power amplifier to be changed in order to prevent degradation of the efficiency due to changes in the needs of the amplifier load produced by variations in the fabrication process. The impedance transformer integrated with a WCDMA power amplifier implemented in CMOS technology has been measured obtaining high efficiency, with values of 44.7 % and 43.3 % despite the load variation and an output power of 28.9 dBm and 28.7 dBm for two different chips.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Tunable integrated output impedance transformer on a power amplifier for 4G applications\",\"authors\":\"Y. Jato, A. Herrera, G. De Astis, F. Huin\",\"doi\":\"10.1109/MWSYM.2013.6697421\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of a modified Ruthroff-type transmission line transformer with tuning capability. The variation of a capacitor included in the structure allows the output impedance of a power amplifier to be changed in order to prevent degradation of the efficiency due to changes in the needs of the amplifier load produced by variations in the fabrication process. The impedance transformer integrated with a WCDMA power amplifier implemented in CMOS technology has been measured obtaining high efficiency, with values of 44.7 % and 43.3 % despite the load variation and an output power of 28.9 dBm and 28.7 dBm for two different chips.\",\"PeriodicalId\":128968,\"journal\":{\"name\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2013.6697421\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2013.6697421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tunable integrated output impedance transformer on a power amplifier for 4G applications
This paper presents the design of a modified Ruthroff-type transmission line transformer with tuning capability. The variation of a capacitor included in the structure allows the output impedance of a power amplifier to be changed in order to prevent degradation of the efficiency due to changes in the needs of the amplifier load produced by variations in the fabrication process. The impedance transformer integrated with a WCDMA power amplifier implemented in CMOS technology has been measured obtaining high efficiency, with values of 44.7 % and 43.3 % despite the load variation and an output power of 28.9 dBm and 28.7 dBm for two different chips.
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