Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain

We report on vertically stacked horizontal Si NanoWires (NW) /»-MOSFETs fabricated with a replacement metal gate (RMG) process. For the first time, stacked-NWs transistors are integrated with inner spacers and SiGe source-drain (S/D) stressors. Recessed and epitaxially re-grown SiGe(B) S/D junctions are shown to be efficient to inject strain into Si/-channels. The Precession Electron Diffraction (PED) technique, with a nm-scale precision, is used to quantify the deformation and provide useful information about strain fields at different stages of the fabrication process. Finally, a significant compressive strain and excellent short-channel characteristics are demonstrated in stacked-NWs /-FETs.