采用新型集成导通二极管的8千伏光触发晶闸管

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509480

H. Schulze, M. Ruff, B. Baur, F. Pfirsch, H. Kabza, U. Kellner

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引用次数: 14

摘要

研制了一种新型集成导通二极管的8kv光触发晶闸管。这种导通二极管是通过p基和n基之间结的明确曲率来实现的。为此，使用了“掩模”Al扩散。五个放大门级保证在过压触发的情况下也能安全导通。此外，在放大门级之间集成了一种新的电阻结构，该结构也由掩膜Al扩散控制。

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Light triggered 8 kV thyristors with a new type of integrated breakover diode

Light triggered 8 kV thyristors with a new type of integrated breakover diode were fabricated. This breakover diode is realized by a well-defined curvature of the junction between the p-base and the n-base. For this purpose, a "masked" Al diffusion is used. Five amplifying gate stages guarantee a safe turn-on behavior also in the case of overvoltage triggering. Additionally, a novel resistor structure, which is also controlled by the masked Al diffusion, was integrated between the amplifying gate stages.

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来源期刊

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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