基于180nm CMOS的220GHz高增益片上天线

2018 12th International Symposium on Antennas, Propagation and EM Theory (ISAPE) Pub Date : 2018-12-01 DOI:10.1109/ISAPE.2018.8634228

Jiaming Yang, Dasheng Cui, Zhengzhi Ding, X. Lv

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引用次数: 1

摘要

提出了一种基于180nm cmos工艺的片上集成天线。通过在天线下加载人工磁导体结构，提高了天线增益，优化了天线的辐射方向图。该天线在低侧瓣下的峰值增益可达9.6 dBi。通过在馈线和天线之间使用特殊的结构连接，带宽增加到212-227GHz。

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220GHz High Gain On-chip Antenna Based on 180nm CMOS

This paper presents an on-chip integrated antenna based on 180nm-CMOS process. By loading the artificial magnetic conductor(AMC) structure under the antenna, the antenna gain is improved and the radiation pattern is optimized. The peak gain of this antenna reaches 9.6 dBi with low side lobes. The bandwidth is increased to 212–227GHz by using a special structural connection between the feed line and the antenna.

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来源期刊

2018 12th International Symposium on Antennas, Propagation and EM Theory (ISAPE)

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