基于SiGe BiCMOS技术实现的52 GHz低相位噪声压控振荡器

The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, 2003. Proceedings. Pub Date : 2003-07-22 DOI:10.1109/IWSOC.2003.1213046

L. Jia, A. Cabuk, Jianguo Ma, K. Yeo

{"title":"基于SiGe BiCMOS技术实现的52 GHz低相位噪声压控振荡器","authors":"L. Jia, A. Cabuk, Jianguo Ma, K. Yeo","doi":"10.1109/IWSOC.2003.1213046","DOIUrl":null,"url":null,"abstract":"A fully integrated 52 GHz millimeter wave LC VCO with -106 dBc/Hz phase noise at 600 kHz offset frequency and 0.93 GHz tuning range is reported in the paper using IBM BiCMOS-6HP technology. The output voltage swing of the VCO is about 0.4 Vp-p for the complementary cross-coupled topology with the buffer. A bipolar device is used as the tail transistor to supply constant a current to preserve the oscillation of the VCO. The parasitics due to interconnect metals are extracted from the layouts, the effects of those parasitics on the VCO's performance are investigated. Based on the analyses, the optimized layout of the complementary VCO is obtained, the pre-layout and the post-layout simulations are compared and presented in this paper.","PeriodicalId":259178,"journal":{"name":"The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, 2003. Proceedings.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 52 GHz VCO with low phase noise implemented in SiGe BiCMOS technology\",\"authors\":\"L. Jia, A. Cabuk, Jianguo Ma, K. Yeo\",\"doi\":\"10.1109/IWSOC.2003.1213046\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated 52 GHz millimeter wave LC VCO with -106 dBc/Hz phase noise at 600 kHz offset frequency and 0.93 GHz tuning range is reported in the paper using IBM BiCMOS-6HP technology. The output voltage swing of the VCO is about 0.4 Vp-p for the complementary cross-coupled topology with the buffer. A bipolar device is used as the tail transistor to supply constant a current to preserve the oscillation of the VCO. The parasitics due to interconnect metals are extracted from the layouts, the effects of those parasitics on the VCO's performance are investigated. Based on the analyses, the optimized layout of the complementary VCO is obtained, the pre-layout and the post-layout simulations are compared and presented in this paper.\",\"PeriodicalId\":259178,\"journal\":{\"name\":\"The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, 2003. Proceedings.\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-07-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, 2003. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWSOC.2003.1213046\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, 2003. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWSOC.2003.1213046","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

本文采用IBM BiCMOS-6HP技术，设计了一种完全集成的52 GHz毫米波LC压控振荡器，在600 kHz偏置频率下相位噪声为-106 dBc/Hz，调谐范围为0.93 GHz。对于带缓冲器的互补交叉耦合拓扑，压控振荡器的输出电压摆幅约为0.4 Vp-p。双极器件用作尾晶体管，以提供恒定电流以保持压控振荡器的振荡。从电路布局中提取了互连金属的寄生效应，研究了这些寄生效应对VCO性能的影响。在此基础上，给出了互补式压控振荡器的优化布局，并对布局前和布局后的仿真结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 52 GHz VCO with low phase noise implemented in SiGe BiCMOS technology

A fully integrated 52 GHz millimeter wave LC VCO with -106 dBc/Hz phase noise at 600 kHz offset frequency and 0.93 GHz tuning range is reported in the paper using IBM BiCMOS-6HP technology. The output voltage swing of the VCO is about 0.4 Vp-p for the complementary cross-coupled topology with the buffer. A bipolar device is used as the tail transistor to supply constant a current to preserve the oscillation of the VCO. The parasitics due to interconnect metals are extracted from the layouts, the effects of those parasitics on the VCO's performance are investigated. Based on the analyses, the optimized layout of the complementary VCO is obtained, the pre-layout and the post-layout simulations are compared and presented in this paper.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, 2003. Proceedings.

自引率

0.00%

发文量