M. Seo, M. Urteaga, A. Young, V. Jain, Z. Griffith, J. Hacker, P. Rowell, R. Pierson, M. Rodwell
{"title":">300GHz定频和压控基频振荡器在InP DHBT工艺中的应用","authors":"M. Seo, M. Urteaga, A. Young, V. Jain, Z. Griffith, J. Hacker, P. Rowell, R. Pierson, M. Rodwell","doi":"10.1109/MWSYM.2010.5517015","DOIUrl":null,"url":null,"abstract":"We report fundamental fixed-frequency and voltage-controlled oscillators operating at >300GHz fabricated in a 256nm InP DHBT technology. Oscillator designs are based on a differential series-tuned topology followed by a common-base buffer. Measured oscillation frequencies of fixed-frequency designs are 267.4, 286.8, 310.2, and 346.2GHz, at P<inf>DC</inf>=35mW. At optimum bias, the output power was measured to be −5.1, −6.9, −9.2, and −11.0 dBm for each design (no probe loss correction), with P<inf>DC</inf>≤115mW. Measured phase noise was −96.6dBc/Hz at 10MHz offset. Varactor-tuned designs demonstrated 10.6–12.3 GHz of tuning bandwidth.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"43","resultStr":"{\"title\":\">300GHz fixed-frequency and voltage-controlled fundamental oscillators in an InP DHBT process\",\"authors\":\"M. Seo, M. Urteaga, A. Young, V. Jain, Z. Griffith, J. Hacker, P. Rowell, R. Pierson, M. Rodwell\",\"doi\":\"10.1109/MWSYM.2010.5517015\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report fundamental fixed-frequency and voltage-controlled oscillators operating at >300GHz fabricated in a 256nm InP DHBT technology. Oscillator designs are based on a differential series-tuned topology followed by a common-base buffer. Measured oscillation frequencies of fixed-frequency designs are 267.4, 286.8, 310.2, and 346.2GHz, at P<inf>DC</inf>=35mW. At optimum bias, the output power was measured to be −5.1, −6.9, −9.2, and −11.0 dBm for each design (no probe loss correction), with P<inf>DC</inf>≤115mW. Measured phase noise was −96.6dBc/Hz at 10MHz offset. Varactor-tuned designs demonstrated 10.6–12.3 GHz of tuning bandwidth.\",\"PeriodicalId\":341557,\"journal\":{\"name\":\"2010 IEEE MTT-S International Microwave Symposium\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"43\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2010.5517015\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2010.5517015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
>300GHz fixed-frequency and voltage-controlled fundamental oscillators in an InP DHBT process
We report fundamental fixed-frequency and voltage-controlled oscillators operating at >300GHz fabricated in a 256nm InP DHBT technology. Oscillator designs are based on a differential series-tuned topology followed by a common-base buffer. Measured oscillation frequencies of fixed-frequency designs are 267.4, 286.8, 310.2, and 346.2GHz, at PDC=35mW. At optimum bias, the output power was measured to be −5.1, −6.9, −9.2, and −11.0 dBm for each design (no probe loss correction), with PDC≤115mW. Measured phase noise was −96.6dBc/Hz at 10MHz offset. Varactor-tuned designs demonstrated 10.6–12.3 GHz of tuning bandwidth.
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