Design of high sensitivity detector for underwater communication system

Al0.52In0.48P is the largest bandgap material in III-V non-nitride semiconductors that is lattice matched to a readily available substrate (GaAs). Having a bandgap narrower than that of GaN enables it to detect wavelengths around 480 nm. Such wavelengths have the best transmittance underwater and may be used as a carrier in underwater communication systems. We present an Al0.52In0.48P homo-junction Separate-Absorption-Multiplication-Avalanche-Photodiode (SAMAPD) as a high sensitivity detector for such an application. By increasing the neutral and space-charge region thicknesses, the peak response wavelength can be tuned to longer wavelengths with a narrower full-width-half-maximum (FWHM). The quantum efficiency of the detector reduces with FWHM and this is compensated by having an avalanche gain. At room temperature, the SAM-APD has a dark current of <20 pA for a 210 μm radius device up to 99.9% of breakdown voltage. The structure gives a narrow spectral FWHM of 22 nm with centre wavelength of 482 nm. An external quantum efficiency of 33% and 6410% at 482 nm is obtained at bias voltage of -19 V and -92.6 V respectively.