{"title":"半导体超晶格中等离子体极电子的不稳定性","authors":"A. A. Bulgakov, O.V. Shramkova","doi":"10.1109/CRMICO.2002.1137303","DOIUrl":null,"url":null,"abstract":"The conditions of instability of plasma polaritons in infinite structures, which were derived by a periodic recurrence of two alternating semiconductor layers, was considered. It was assumed that carrier drift takes place. The conditions for the appearance of the instability and its increments of growth were derived.","PeriodicalId":378024,"journal":{"name":"12th International Conference Microwave and Telecommunication Technology","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Plasma polaritron instability in semiconductor superlattice\",\"authors\":\"A. A. Bulgakov, O.V. Shramkova\",\"doi\":\"10.1109/CRMICO.2002.1137303\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The conditions of instability of plasma polaritons in infinite structures, which were derived by a periodic recurrence of two alternating semiconductor layers, was considered. It was assumed that carrier drift takes place. The conditions for the appearance of the instability and its increments of growth were derived.\",\"PeriodicalId\":378024,\"journal\":{\"name\":\"12th International Conference Microwave and Telecommunication Technology\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Conference Microwave and Telecommunication Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2002.1137303\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference Microwave and Telecommunication Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2002.1137303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Plasma polaritron instability in semiconductor superlattice
The conditions of instability of plasma polaritons in infinite structures, which were derived by a periodic recurrence of two alternating semiconductor layers, was considered. It was assumed that carrier drift takes place. The conditions for the appearance of the instability and its increments of growth were derived.
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