BiCMOS栅极延迟分析包括温度效应和大电流瞬态

Proceedings IEEE Southeastcon '92 Pub Date : 1992-04-12 DOI:10.1109/SECON.1992.202331

J. Yuan, K. Pham

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引用次数: 0

摘要

该模型考虑了nMOS晶体管的高电场效应和双极晶体管在宽温度范围内的高电流效应。分析方程提供了在不同温度下工艺和器件参数对电路性能敏感性的评价。利用本分析对BiCMOS驱动器的计算机仿真结果与双鱼座仿真结果进行了比较，以支持物理推理。

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BiCMOS gate delay analysis including temperature effect and high current transients

The model accounts for high electric field effect in the nMOS transistor and high current effects in the bipolar transistor for a wide temperature range. The analytical equations provide evaluation of the sensitivity of process and device parameters on circuit performance at different temperatures. Computer simulation results of a BiCMOS driver using the present analysis are compared with PISCES simulation in support of physical reasoning.<>

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Proceedings IEEE Southeastcon '92

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