{"title":"多千瓦多兆赫无线电力传输系统中SiC逆变器开关极限的探索","authors":"Yao Wang, R. Kheirollahi, F. Lu, Hua Zhang","doi":"10.1109/APEC43580.2023.10131448","DOIUrl":null,"url":null,"abstract":"Silicon carbide (SiC) MOSFET has significantly facilitated high-power and high-frequency inverter design for wireless power transfer (WPT) systems. However, in the multi-kW multi-MHz area, the application of the SiC full-bridge inverter is still insufficient. This paper aims to explore the switching limit of SiC full-bridge inverter at multi-kW power levels and provides a methodology for MOSFET selection, inverter circuit design, and zero-voltage switching (ZVS) realization. Two sets of inverters are respectively implemented based on isolated gate driver UCC5390 and non-isolated IXRFD631 and tested at a switching frequency of 3MHz-4MHz and an input dc voltage of 350V~550V. The experimental results firstly reveal the potential and capability of a SiC full-bridge inverter in achieving kilowatts high power level at multi-MHz switching frequency with 4.39kW at 3MHz and 3.19kW at 4MHz, and a switching limit of 4MHz is proposed for the SiC full-bridge inverter with overall consideration of ZVS availability and inverter safety.","PeriodicalId":151216,"journal":{"name":"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Exploring Switching Limit of SiC Inverter for Multi-kW Multi-MHz Wireless Power Transfer System\",\"authors\":\"Yao Wang, R. Kheirollahi, F. Lu, Hua Zhang\",\"doi\":\"10.1109/APEC43580.2023.10131448\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon carbide (SiC) MOSFET has significantly facilitated high-power and high-frequency inverter design for wireless power transfer (WPT) systems. However, in the multi-kW multi-MHz area, the application of the SiC full-bridge inverter is still insufficient. This paper aims to explore the switching limit of SiC full-bridge inverter at multi-kW power levels and provides a methodology for MOSFET selection, inverter circuit design, and zero-voltage switching (ZVS) realization. Two sets of inverters are respectively implemented based on isolated gate driver UCC5390 and non-isolated IXRFD631 and tested at a switching frequency of 3MHz-4MHz and an input dc voltage of 350V~550V. The experimental results firstly reveal the potential and capability of a SiC full-bridge inverter in achieving kilowatts high power level at multi-MHz switching frequency with 4.39kW at 3MHz and 3.19kW at 4MHz, and a switching limit of 4MHz is proposed for the SiC full-bridge inverter with overall consideration of ZVS availability and inverter safety.\",\"PeriodicalId\":151216,\"journal\":{\"name\":\"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC43580.2023.10131448\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC43580.2023.10131448","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Exploring Switching Limit of SiC Inverter for Multi-kW Multi-MHz Wireless Power Transfer System
Silicon carbide (SiC) MOSFET has significantly facilitated high-power and high-frequency inverter design for wireless power transfer (WPT) systems. However, in the multi-kW multi-MHz area, the application of the SiC full-bridge inverter is still insufficient. This paper aims to explore the switching limit of SiC full-bridge inverter at multi-kW power levels and provides a methodology for MOSFET selection, inverter circuit design, and zero-voltage switching (ZVS) realization. Two sets of inverters are respectively implemented based on isolated gate driver UCC5390 and non-isolated IXRFD631 and tested at a switching frequency of 3MHz-4MHz and an input dc voltage of 350V~550V. The experimental results firstly reveal the potential and capability of a SiC full-bridge inverter in achieving kilowatts high power level at multi-MHz switching frequency with 4.39kW at 3MHz and 3.19kW at 4MHz, and a switching limit of 4MHz is proposed for the SiC full-bridge inverter with overall consideration of ZVS availability and inverter safety.
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