通过28nm UTBB FDSOI体偏置控制，具有IIP2校准的低功率无电感射频接收器前端

2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2016-05-22 DOI:10.1109/RFIC.2016.7508257

D. Danilovic, V. Milovanovic, A. Cathelin, A. Vladimirescu, B. Nikolić

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引用次数: 8

摘要

采用28nm UTBB FDSOI CMOS设计并实现的紧凑节能接收器前端，支持蓝牙(BT)与LTE FDD Band 7发射模块在器件内共存。该接收器基于无电感器低中频电流模式LNTA-first架构，并具有IIP2校准功能。通过无源混频器开关对的体偏置实现IIP2的改进。该接收机的有效面积为0.12mm2，功耗为4.4mW，通过体偏置调谐实现了25dB以上的IIP2提升，NF为8.6dB，增益为26.7dB，均在BT规范范围内。

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Low-power inductorless RF receiver front-end with IIP2 calibration through body bias control in 28nm UTBB FDSOI

A compact energy-efficient receiver front-end designed and implemented in 28nm UTBB FDSOI CMOS supports in-device coexistence of Bluetooth (BT) with an LTE FDD Band 7 transmitter module. The receiver is based on an inductorless low-IF current-mode LNTA-first architecture and features IIP2 calibration. IIP2 improvement is implemented through the body bias of the passive mixer switching pairs. The fabricated receiver has an active area of 0.12mm2, power consumption of 4.4mW, achieves IIP2 improvement of over 25dB through body bias tuning, NF of 8.6dB and gain of 26.7dB, all within BT specification.

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2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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