基于集成光滤波器的高容量单边带抑制载波调制技术

C. Porzi, F. Falconi, S. Melo, A. Nottola, S. Tirelli, G. Preve, M. Sorel, A. Bogoni
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引用次数: 1

摘要

采用相位调制器(PM)和集成光滤波器(DFBR)在硅纳米线带状波导中实现了一个5 Gbit/s的单边带抑制载波(SSB-SC)调制信号。测量了集成滤波器组延迟响应的带内小变化。滤波器相位对产生的SSB-SC信号的中等影响也通过超过60公里的标准单模光纤传输来评估,表明额外的功率损失约为1 dB。在实验演示中,宽带调制数据采用了20 GHz的频移。通过从PM中过滤高次谐波并重新插入光载波,该方案可以潜在地用于从较低的射频载波开始产生高达毫米波频段的ssb调制信号。该结构简单稳定,适合将DFBR滤波器与PM单片集成,以最小的占用空间实现绝缘体上硅技术的光子集成电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-Capacity Single-Sideband Suppressed-Carrier Modulation with Integrated Optical Filter in Silicon-on-Insulator Technology
A 5 Gbit/s single-sideband suppressed-carrier (SSB-SC) modulated signal is generated using a phase modulator (PM) and an integrated optical filter implemented with a third-order distributed feedback resonator (DFBR) in a silicon nanowire strip waveguide. Small in-band variations of the integrated filter group delay response have been measured. The moderate impact of the filter phase on the generated SSB-SC signal is also assessed by transmission over 60 km of standard single mode fiber, indicating an additional power penalty of about 1 dB. A frequency shift of 20 GHz for the broadband modulated data is employed in this experimental demonstration. By filtering high-order harmonics from the PM and reinserting the optical carrier, the scheme can be potentially employed for generating SSB-modulated signals up to the mmwave band starting from a lower RF carrier. The proposed architecture is simple and stable, and suitable for realizing a photonic integrated circuit in silicon-on-insulator technology with minimized footprint by monolithic integration of the DFBR filter with the PM.
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