T. Shimizu, Y. Nunogawa, T. Furuya, S. Yamada, I. Yoshida, H. Masao
{"title":"一种小型GSM功率放大器模块,采用Si-LDMOS驱动MMIC","authors":"T. Shimizu, Y. Nunogawa, T. Furuya, S. Yamada, I. Yoshida, H. Masao","doi":"10.1109/ISSCC.2004.1332661","DOIUrl":null,"url":null,"abstract":"A small quad-band Si-MOS high power amplifier module with a package size of 8x8 mm/sup 2/ includes a driver MMIC in an LDMOS process and provides a built-in power control loop employing a current sense method. The IC achieves 53% power efficiency at 35dBm output power over the 824 to 915MHz GSM band using a 3.6V supply.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"A small GSM power amplifier module using Si-LDMOS driver MMIC\",\"authors\":\"T. Shimizu, Y. Nunogawa, T. Furuya, S. Yamada, I. Yoshida, H. Masao\",\"doi\":\"10.1109/ISSCC.2004.1332661\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A small quad-band Si-MOS high power amplifier module with a package size of 8x8 mm/sup 2/ includes a driver MMIC in an LDMOS process and provides a built-in power control loop employing a current sense method. The IC achieves 53% power efficiency at 35dBm output power over the 824 to 915MHz GSM band using a 3.6V supply.\",\"PeriodicalId\":273317,\"journal\":{\"name\":\"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2004.1332661\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2004.1332661","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A small GSM power amplifier module using Si-LDMOS driver MMIC
A small quad-band Si-MOS high power amplifier module with a package size of 8x8 mm/sup 2/ includes a driver MMIC in an LDMOS process and provides a built-in power control loop employing a current sense method. The IC achieves 53% power efficiency at 35dBm output power over the 824 to 915MHz GSM band using a 3.6V supply.