in /sub x/Ga/sub 1-x/As/InP和in /sub x/Ga/sub 1-x/As/GaAs薄膜中拉曼散射不对称展宽的研究

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328180

J.L. Shen, S. Chang, S.C. Lee, Y.F. Chen

{"title":"in /sub x/Ga/sub 1-x/As/InP和in /sub x/Ga/sub 1-x/As/GaAs薄膜中拉曼散射不对称展宽的研究","authors":"J.L. Shen, S. Chang, S.C. Lee, Y.F. Chen","doi":"10.1109/ICIPRM.1994.328180","DOIUrl":null,"url":null,"abstract":"Raman scattering of In/sub x/Ga/sub 1-x/As epitaxial layers on InP and GaAs substrates have been investigated with a wide range of composition. It is found that the asymmetric broadening of LO phonon modes varies with composition as well as substrate. With the one-parameter spatial correlation model, the Raman lineshapes have been analyzed, but the fits showed some deviation to the experiments. Comparing the Raman spectra with the measurements of double-crystal X-ray diffraction (DXRD), we found that, besides the alloy disorder, the Raman lineshapes are also influenced by the structural dislocation. Our results provide a framework for the use of the two-parameter spatial correlation model in the study of the Raman spectra in epilayer structures.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"86 12","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of asymmetric broadening of Raman scattering in In/sub x/Ga/sub 1-x/As/InP and In/sub x/Ga/sub 1-x/As/GaAs epilayers\",\"authors\":\"J.L. Shen, S. Chang, S.C. Lee, Y.F. Chen\",\"doi\":\"10.1109/ICIPRM.1994.328180\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Raman scattering of In/sub x/Ga/sub 1-x/As epitaxial layers on InP and GaAs substrates have been investigated with a wide range of composition. It is found that the asymmetric broadening of LO phonon modes varies with composition as well as substrate. With the one-parameter spatial correlation model, the Raman lineshapes have been analyzed, but the fits showed some deviation to the experiments. Comparing the Raman spectra with the measurements of double-crystal X-ray diffraction (DXRD), we found that, besides the alloy disorder, the Raman lineshapes are also influenced by the structural dislocation. Our results provide a framework for the use of the two-parameter spatial correlation model in the study of the Raman spectra in epilayer structures.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"86 12\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328180\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328180","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

研究了In/sub x/Ga/sub 1-x/As外延层在InP和GaAs衬底上的拉曼散射特性。发现LO声子模的不对称展宽随材料组成和衬底的不同而变化。利用单参数空间相关模型对拉曼线形状进行了分析，但拟合结果与实验结果存在一定偏差。将拉曼光谱与双晶x射线衍射(DXRD)的测量结果进行比较，发现除了合金的无序性外，结构位错也会影响拉曼线的形状。我们的研究结果为利用双参数空间相关模型研究薄膜结构中的拉曼光谱提供了一个框架。

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Study of asymmetric broadening of Raman scattering in In/sub x/Ga/sub 1-x/As/InP and In/sub x/Ga/sub 1-x/As/GaAs epilayers

Raman scattering of In/sub x/Ga/sub 1-x/As epitaxial layers on InP and GaAs substrates have been investigated with a wide range of composition. It is found that the asymmetric broadening of LO phonon modes varies with composition as well as substrate. With the one-parameter spatial correlation model, the Raman lineshapes have been analyzed, but the fits showed some deviation to the experiments. Comparing the Raman spectra with the measurements of double-crystal X-ray diffraction (DXRD), we found that, besides the alloy disorder, the Raman lineshapes are also influenced by the structural dislocation. Our results provide a framework for the use of the two-parameter spatial correlation model in the study of the Raman spectra in epilayer structures.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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