基于3d堆叠CMOS技术的7.83μm节距背面照明SPAD图像传感器

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-03 DOI:10.1109/IEDM.2016.7838372

T. A. Abbas, N. Dutton, Oscar Almer, S. Pellegrini, Y. Henrion, R. Henderson

{"title":"基于3d堆叠CMOS技术的7.83μm节距背面照明SPAD图像传感器","authors":"T. A. Abbas, N. Dutton, Oscar Almer, S. Pellegrini, Y. Henrion, R. Henderson","doi":"10.1109/IEDM.2016.7838372","DOIUrl":null,"url":null,"abstract":"We present the first 3D-stacked backside illuminated (BSI) single photon avalanche diode (SPAD) image sensor capable of both single photon counting (SPC) intensity, and time resolved imaging. The 128×120 prototype has a pixel pitch of 7.83 μm making it the smallest pixel reported for SPAD image sensors. A low power, high density 40nm bottom tier hosts the quenching front end and processing electronics while an imaging specific 65nm top tier hosts the photo-detectors with a 1-to-1 hybrid bond connection [1]. The SPAD exhibits a median dark count rate (DCR) below 200cps at room temperature and 1V excess bias, and has a peak photon detection probability (PDP) of 27.5% at 640nm and 3 V excess bias.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"109","resultStr":"{\"title\":\"Backside illuminated SPAD image sensor with 7.83μm pitch in 3D-stacked CMOS technology\",\"authors\":\"T. A. Abbas, N. Dutton, Oscar Almer, S. Pellegrini, Y. Henrion, R. Henderson\",\"doi\":\"10.1109/IEDM.2016.7838372\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the first 3D-stacked backside illuminated (BSI) single photon avalanche diode (SPAD) image sensor capable of both single photon counting (SPC) intensity, and time resolved imaging. The 128×120 prototype has a pixel pitch of 7.83 μm making it the smallest pixel reported for SPAD image sensors. A low power, high density 40nm bottom tier hosts the quenching front end and processing electronics while an imaging specific 65nm top tier hosts the photo-detectors with a 1-to-1 hybrid bond connection [1]. The SPAD exhibits a median dark count rate (DCR) below 200cps at room temperature and 1V excess bias, and has a peak photon detection probability (PDP) of 27.5% at 640nm and 3 V excess bias.\",\"PeriodicalId\":186544,\"journal\":{\"name\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"109\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2016.7838372\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838372","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 109

摘要

我们提出了第一个3d堆叠背照(BSI)单光子雪崩二极管(SPAD)图像传感器，能够同时实现单光子计数(SPC)强度和时间分辨成像。128×120原型的像素间距为7.83 μm，是SPAD图像传感器中最小的像素。低功率，高密度40nm底层承载淬火前端和处理电子器件，而成像专用的65nm顶层承载具有1对1混合键连接的光电探测器[1]。SPAD在室温和1V偏置下的中位暗计数率(DCR)低于200cps，在640nm和3v偏置下的峰值光子检测概率(PDP)为27.5%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Backside illuminated SPAD image sensor with 7.83μm pitch in 3D-stacked CMOS technology

We present the first 3D-stacked backside illuminated (BSI) single photon avalanche diode (SPAD) image sensor capable of both single photon counting (SPC) intensity, and time resolved imaging. The 128×120 prototype has a pixel pitch of 7.83 μm making it the smallest pixel reported for SPAD image sensors. A low power, high density 40nm bottom tier hosts the quenching front end and processing electronics while an imaging specific 65nm top tier hosts the photo-detectors with a 1-to-1 hybrid bond connection [1]. The SPAD exhibits a median dark count rate (DCR) below 200cps at room temperature and 1V excess bias, and has a peak photon detection probability (PDP) of 27.5% at 640nm and 3 V excess bias.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE International Electron Devices Meeting (IEDM)

自引率

0.00%

发文量