用于高速转移电子器件的GaxIn1-xSb

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1977.189262

M. Kawashima, K. Ohta, S. Kataoka

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引用次数: 2

摘要

测定了LPE生长的GaxIn1-xSb的转移电子效应的基本性质。低阈值场，400-600 V/cm，(0.4≤x≤0.8)，低恒定域速度，5 × 106cm/sec，(0.55≤x≤0.8)，以及域中低冲击电离率使该材料在高速逻辑器件中具有前景。使用最佳的Ga成分x=0.8，期望更小的功率延迟产品，约为GaAs Gunn逻辑(20fJ)的1/50。

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GaxIn1-xSb for high speed transferred electron devices

Foundamental properties of the transferred electron effect of LPE grown GaxIn1-xSb have been measured. Low threshold field, 400-600 V/cm, (0.4 ≤ x ≤ 0.8), low constant domain velocity, 5 × 10⁶cm/sec, (0.55 ≤ x ≤ 0.8 ), and low impact ionization rate in the domain makes this material promising for high speed logic devices. Smaller power-delay poduct, about 1/50 of that of GaAs Gunn logic (20fJ) is expected, using an optimum Ga composition x=0.8.

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来源期刊

1977 International Electron Devices Meeting

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