29.6 5nm FinFET CMOS中具有时间复用校准环路的分布式数字LDO,实现40A/mm2电流密度和1ma至6.4A超宽负载范围

Dong-Hoon Jung, Tae-Hwang Kong, Jun-Hyeok Yang, SangHo Kim, Kwang-Ho Kim, J. Park, Michael Choi, Jongshin Shin
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引用次数: 4

摘要

尽管用于高性能计算和人工智能等应用的现代微处理器的核心数量不断增加,但可用功率受到热功率预算的严格限制。为了克服这一限制,最近,每个核心都实现了一个专用的集成电压调节器,以提高电力使用效率。分布式数字LDO (DLDO)是集成稳压器的强大解决方案,因为它可以在整个核心上提供均匀的电源,减少IR下降,并有助于热管理[1 - 4]。在之前的分布式dldo[1 - 3]中,尽管所有的LDO输出都连接起来驱动供电网络,但LDO使用自己的控制器独立运行,这占据了LDO的很大一部分大小。因此,这类结构中的电流密度很低。在[4]中,分布式DLDO采用双环结构。在该方案中,由于四个共享全局控制器控制16个局部ldo (lldo),因此可以实现高电流密度,从而实现高精度调节。然而,lldo消耗了很大的静态电流,因为它们在几ghz的开关频率下工作,以获得快速的瞬态响应。此外,由于功率场效应管的开关占空比较小,负载电流范围较窄。由于这些缺点,[4]中提出的结构在实际应用中存在局限性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
29.6 A Distributed Digital LDO with Time-Multiplexing Calibration Loop Achieving 40A/mm2 Current Density and 1mA-to-6.4A Ultra-Wide Load Range in 5nm FinFET CMOS
Although the number of cores is increasing continuously in modern microprocessors for applications such as HPC and AI, the available power is strictly limited by the thermal power budget. To overcome this limitation, recently, each core has been implemented with a dedicated integrated voltage regulator to increase the efficiency of power usage. Distributed digital LDO (DLDO) is a powerful solution for the integrated voltage regulator because it can supply uniform power over the entire core with reduced IR drop and help the thermal management [1– 4]. In the previous distributed DLDOs [1– 3], even though all LDO outputs are connected to drive the power-delivery network, the LDOs operate independently using their own controller, which occupies a large portion of the LDO size. Therefore, the current density in these types of structures is low. In [4], the distributed DLDO uses a dual-loop structure. In this scheme, the high current density can be achieved because the four shared global controllers control the 16 local LDOs (LLDOs) for highly accurate regulation. However, the LLDOs consume large quiescent current since they operate at a switching frequency of several-GHz for a fast transient response. Besides, the load current range is narrow due to the small switching duty-cycle range of the power FETs. Because of these drawbacks, the structure proposed in [4] has limitations in practical applications.
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