用于高性能纳米电子片上互连的模拟/射频设计技术

Bao Liu
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引用次数: 0

摘要

片上互连构成了超大规模集成电路系统性能的瓶颈。随着技术的进步,VLSI片上互连面临着越来越大的挑战,如(1)信号衰减和(2)串扰耦合。本文提出了两种用于高性能纳米电子片上互连的模拟/射频设计技术:(1)采用分布式放大器通过降低互连有效电阻来补偿信号衰减;(2)在分频VLSI片上通信系统中应用带通滤波器来抗噪。HSPICE-RF在65纳米CMOS技术上的仿真结果验证了所提出的模拟/RF设计技术在高性能纳米电子片上互连方面实现了更高的性能和可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analog/RF design techniques for high performance nanoelectronic on-chip interconnects
On-chip interconnects form the bottleneck of VLSI system performance. As technology progresses, VLSI on-chip interconnects encounter increasingly significant challenges, such as (1) signal attenuation and (2) crosstalk coupling. This paper proposes two analog/RF design techniques for high performance nanoelectronic on-chip interconnects: (1) application of distributed amplifiers for signal attenuation compensation by reducing interconnect effective resistance, and (2) application of bandpass filters for noise immunity in a frequency separated VLSI on-chip communication system. HSPICE-RF simulation results in 65 nm CMOS technology verify that the proposed analog/RF design techniques achieve improved performance and reliability for high performance nanoelectronic on-chip interconnects.
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