异质结构DDR IMPATT与传统二极管直流特性的比较

International Conference on Electronics, Communication and Instrumentation (ICECI) Pub Date : 2014-03-17 DOI:10.1109/ICECI.2014.6767375

A. Deyasi, Kasturi Mukherjee, S. Bhattacharyya

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引用次数: 1

摘要

本文对Si/Si0.9Ge0.1 DDR IMPATT的电场分布、归一化电流密度、击穿电压和转换效率进行了数值计算，并与Si DDR二极管进行了比较。在泊松方程、载流子扩散方程和连续方程同时数值解的基础上，考虑移动空间电荷的影响，采用双迭代技术进行计算。在适当的边界条件下，得到电场和归一化电流分布图。计算了最佳输入偏置电流密度下的击穿电压和转换效率。掺杂浓度的选择是为了获得穿透效果。结果可用于微波和毫米波频率范围内的小信号分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance comparison on D.C properties of heterostructure DDR IMPATT with conventional diode

In this paper, electric field profile, normalized current density, breakdown voltage and conversion efficiency of Si/Si0.9Ge0.1 DDR IMPATT are numerically computed and results are compared with Si DDR diode for optimized input bias current. Double iterative technique is used for computational purpose which is based on simultaneous numerical solution of Poisson's equation, carrier diffusion equation and continuity equation in addition with the effect of mobile space charge. Electric field and normalized current profiles are obtained subject to the appropriate boundary conditions. Breakdown voltage and conversion efficiency are calculated for optimized input bias current density. Doping concentration is so chosen to obtain punch-through effect. Results are useful for small-signal analysis at microwave and millimeterwave frequency range.

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International Conference on Electronics, Communication and Instrumentation (ICECI)

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