1gs /s, 11b跟踪保持放大器，增益损耗小于0.1 dB

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628244

R. Yu, N. Sheng, K. Cheng, G. Gutiérrez, K. Wang, M. Chang

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引用次数: 7

摘要

在生产AlGaAs/GaAs HBT工艺中实现了用于高速adc的跟踪保持放大器。在Nyquist条件下，所制备的集成电路在1gs /s和800ms /s下分别显示出11个有效位元(ENOBs)和bb1012个有效位元(ENOBs)。这些集成电路的大信号增益损耗均在0.1 dB以下。

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A 1 GS/s, 11-b track-and-hold amplifier with <0.1 dB gain loss

A track-and-hold amplifier for use in high-speed ADCs was implemented in a production AlGaAs/GaAs HBT process. Under Nyquist conditions, the fabricated ICs showed 11 effective number of bits (ENOBs) at 1 GS/s and >12 ENOBs at 800 MS/s. The large signal gain loss of these ICs was measured to be below 0.1 dB.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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