基于cmos记忆元件的新型电压模式感测放大器设计

2018 International Conference on Computing and Network Communications (CoCoNet) Pub Date : 2018-08-01 DOI:10.1109/coconet.2018.8476901

A. Alimkhan, O. Krestinskaya

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引用次数: 0

摘要

忆阻器是一种新器件，广泛应用于最近提出的架构中，以提高片上面积和功耗。本文提出了一种采用TSMC lSOnm CMOS技术设计的新型CMOS记忆式电压模式检测放大器(VMSA)。在该电路中，将传统CMOS感测放大器设计中的几个CMOS晶体管替换为忆阻元件。初步设计在SPICE中进行了仿真。所提出的放大器保证了放大器片上面积的减小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New Voltage Mode Sense Amplifier Design with CMOS-Memristive Components

Memristor is a new device that is widely used in recently proposed architectures to improve on-chip area and power consumption. This paper proposes novel CMOS-memristive Voltage Mode Sense Amplifier (VMSA) designed with TSMC lSOnm CMOS technology. In the proposed circuit, several CMOS transistors of the conventional CMOS sense amplifier design are replaced with memristive elements. The preliminary design is simulated in SPICE. The proposed amplifier ensures the reduction of on-chip area of the amplifier.

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2018 International Conference on Computing and Network Communications (CoCoNet)

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