先进的浅沟隔离抑制0.24 /spl亩/米间距隔离及以上的反向窄通道效应

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852816

K. Horita, T. Kuroi, Y. Itoh, K. Shiozawa, K. Eikyu, K. Goto, Y. Inoue, M. Inuishi

{"title":"先进的浅沟隔离抑制0.24 /spl亩/米间距隔离及以上的反向窄通道效应","authors":"K. Horita, T. Kuroi, Y. Itoh, K. Shiozawa, K. Eikyu, K. Goto, Y. Inoue, M. Inuishi","doi":"10.1109/VLSIT.2000.852816","DOIUrl":null,"url":null,"abstract":"A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO/sub 2/ stacked mask has been proposed. The poly-Si is oxidized at the step of liner oxidation and then a \"small bird's beak\" is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.","PeriodicalId":268624,"journal":{"name":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 /spl mu/m pitch isolation and beyond\",\"authors\":\"K. Horita, T. Kuroi, Y. Itoh, K. Shiozawa, K. Eikyu, K. Goto, Y. Inoue, M. Inuishi\",\"doi\":\"10.1109/VLSIT.2000.852816\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO/sub 2/ stacked mask has been proposed. The poly-Si is oxidized at the step of liner oxidation and then a \\\"small bird's beak\\\" is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.\",\"PeriodicalId\":268624,\"journal\":{\"name\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2000.852816\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2000.852816","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

提出了一种新型的基于SiN/poly-Si/SiO/sub - 2/堆叠掩膜的聚硅缓冲掩膜聚硅(PB-STI)浅沟槽隔离技术。多晶硅在衬里氧化的步骤中被氧化，然后生长出“小鸟喙”。小鸟喙状结构防止了沟槽边缘的氧化隐窝，有效地避免了栅极电场的边沿。PB-STI可以完全抑制反向窄通道效应，其过程顺序非常简单，不需要拐角注入。

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Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 /spl mu/m pitch isolation and beyond

A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO/sub 2/ stacked mask has been proposed. The poly-Si is oxidized at the step of liner oxidation and then a "small bird's beak" is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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