N. Otake, Hitoshi Yamada, H. Wado, K. Abe, Y. Takeuchi
{"title":"脉冲工作下的高功率垂直腔面发射激光器","authors":"N. Otake, Hitoshi Yamada, H. Wado, K. Abe, Y. Takeuchi","doi":"10.1109/INOW.2008.4634550","DOIUrl":null,"url":null,"abstract":"We have investigated InGaAs multiple-quantum-wells vertical-cavity surface-emitting laser (VCSEL) under high-power pulsed operation. The peak pulsed power of over 12.5 W has been achieved with the single VCSEL device which has five InGaAs quantum wells.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-power vertical-cavity surface-emitting laser under pulsed operation\",\"authors\":\"N. Otake, Hitoshi Yamada, H. Wado, K. Abe, Y. Takeuchi\",\"doi\":\"10.1109/INOW.2008.4634550\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated InGaAs multiple-quantum-wells vertical-cavity surface-emitting laser (VCSEL) under high-power pulsed operation. The peak pulsed power of over 12.5 W has been achieved with the single VCSEL device which has five InGaAs quantum wells.\",\"PeriodicalId\":112256,\"journal\":{\"name\":\"2008 International Nano-Optoelectronics Workshop\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Nano-Optoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INOW.2008.4634550\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Nano-Optoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-power vertical-cavity surface-emitting laser under pulsed operation
We have investigated InGaAs multiple-quantum-wells vertical-cavity surface-emitting laser (VCSEL) under high-power pulsed operation. The peak pulsed power of over 12.5 W has been achieved with the single VCSEL device which has five InGaAs quantum wells.