{"title":"基于单片MEMS谐振器的压力传感器及读出设计","authors":"P. Chuang, K. Wen","doi":"10.1109/ISOCC.2016.7799719","DOIUrl":null,"url":null,"abstract":"A monolithic MEMS resonator based pressure sensor and monolithically integrated with TIA (trans-impedance amplifier) readout circuitry has been fabricated in standard 1p6m AISC process. Dependence of the quality factor and ambient pressures are well known to resonator designers and it will be feasible to integrate a quality factor readout circuitry to detect ambient pressure. By measuring the sample resonator, the air pressure changes from 100 Pa to 1600 Pa, the Q factor will change from 2566 to 452 with resonant frequency in 15.4 k Hz and the readout circuit is designed accordingly. The system power consumption is 332.82 μW with 1.8 V power supply and sensitivity is 0.0203 mV per Q.","PeriodicalId":278207,"journal":{"name":"2016 International SoC Design Conference (ISOCC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monolithic MEMS resonator based pressure sensor and readout design\",\"authors\":\"P. Chuang, K. Wen\",\"doi\":\"10.1109/ISOCC.2016.7799719\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithic MEMS resonator based pressure sensor and monolithically integrated with TIA (trans-impedance amplifier) readout circuitry has been fabricated in standard 1p6m AISC process. Dependence of the quality factor and ambient pressures are well known to resonator designers and it will be feasible to integrate a quality factor readout circuitry to detect ambient pressure. By measuring the sample resonator, the air pressure changes from 100 Pa to 1600 Pa, the Q factor will change from 2566 to 452 with resonant frequency in 15.4 k Hz and the readout circuit is designed accordingly. The system power consumption is 332.82 μW with 1.8 V power supply and sensitivity is 0.0203 mV per Q.\",\"PeriodicalId\":278207,\"journal\":{\"name\":\"2016 International SoC Design Conference (ISOCC)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International SoC Design Conference (ISOCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISOCC.2016.7799719\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International SoC Design Conference (ISOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISOCC.2016.7799719","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithic MEMS resonator based pressure sensor and readout design
A monolithic MEMS resonator based pressure sensor and monolithically integrated with TIA (trans-impedance amplifier) readout circuitry has been fabricated in standard 1p6m AISC process. Dependence of the quality factor and ambient pressures are well known to resonator designers and it will be feasible to integrate a quality factor readout circuitry to detect ambient pressure. By measuring the sample resonator, the air pressure changes from 100 Pa to 1600 Pa, the Q factor will change from 2566 to 452 with resonant frequency in 15.4 k Hz and the readout circuit is designed accordingly. The system power consumption is 332.82 μW with 1.8 V power supply and sensitivity is 0.0203 mV per Q.
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