纳米结构表面超导体中的过热场

W. Pathirana, A. Gurevich
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引用次数: 0

摘要

我们报道了具有纳米结构表面的超导体中的直流过热场Hsh的计算。对杂质浓度不均匀的超导体、超导体上的超导体薄层和超导体-绝缘体-超导体(S-I-S)多层的Ginzburg-Landau (GL)方程进行了数值模拟。过热场的计算考虑了沿表面非零波长迈斯纳态的不稳定性,这对于GL参数κ的真实值至关重要。模拟了Nb和Nb3Sn在不同κ值和平均自由程下的材料参数。研究结果表明,可以通过优化S-I-S多层膜的表面杂质浓度分布和厚度,来提高Nb和Nb3Sn本体过热场以上的Hsh。例如,在Nb上覆盖90 nm厚的Nb3Sn层的S-I-S结构可以将过热场提高到≈500 mT,同时保护超导射频(SRF)腔免受涡旋局部穿透引起的枝晶热磁雪崩的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Superheating field in superconductors with nanostructured surfaces
We report calculations of a DC superheating field Hsh in superconductors with nanostructured surfaces. Numerical simulations of the Ginzburg–Landau (GL) equations were performed for a superconductor with an inhomogeneous impurity concentration, a thin superconducting layer on top of another superconductor, and superconductor–insulator–superconductor (S-I-S) multilayers. The superheating field was calculated taking into account the instability of the Meissner state with a non-zero wavelength along the surface, which is essential for the realistic values of the GL parameter κ. Simulations were performed for the material parameters of Nb and Nb3Sn at different values of κ and the mean free paths. We show that the impurity concentration profile at the surface and thicknesses of S-I-S multilayers can be optimized to enhance Hsh above the bulk superheating fields of both Nb and Nb3Sn. For example, an S-I-S structure with a 90-nm-thick Nb3Sn layer on Nb can boost the superheating field up to ≈500 mT, while protecting the superconducting radio-frequency (SRF) cavity from dendritic thermomagnetic avalanches caused by local penetration of vortices.
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