为3D芯片架构的低成本软x射线测量做准备

hen-Kuan Chou, Don McDaniel, Debbie Gustafson, Chris Lee, D. Reisman
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引用次数: 0

摘要

软x射线系统的应用越来越广泛,特别是在当今领先的半导体芯片制造中使用的极紫外(EUV) 13.5 nm波长。随着小型化的发展和摩尔定律的延续,芯片制造商在二维平面上增加器件密度变得越来越困难,即使采用最先进的EUV光刻技术。芯片制造商现在转向3d堆叠架构,以增加面积密度。由于这些堆叠层由微特征组成,并且需要精确的互连,因此必须对每一层进行适当的计量,以识别可能的缺陷并优化后续层的工艺。需要一种非破坏性的成像工具,可以解决纳米尺寸的特征。软x射线成像可能是一种使用2-20纳米波长的解决方案。产生软x射线光的方法有很多,通常成本相对较高,输出也不同。本讲座将重点介绍一些商业上具有成本效益的组件。我们还将模拟样品的有效软x射线光输出。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparing for cost-effective soft x-ray metrology for 3D chip architecture
The soft x-ray regime is gaining adoption, specifically for the extreme ultraviolet (EUV) 13.5 nm wavelength used in today’s leading-edge semiconductor chip manufacturing. As miniaturization progresses and with the goal of continuing Moore’s Law, it becomes more difficult for chip makers to increase device densities in a 2D plane, even with leading-edge EUV photolithography. Chip makers are now turning to 3D-stacked architectures to increase area density. Since these stacked layers consist of micro-features and require precise interconnections, it is imperative that proper metrology be performed on each layer to identify possible defects and optimize the process on subsequent layers. There is a need for non-destructive imaging tools that can resolve nanometer-sized features. Soft x-ray imaging could be a solution using wavelengths from 2-20 nm. There are many methods of generating soft x-ray light, often with relatively high costs and varying outputs. This talk will highlight some cost-effective components that are commercially available. We will also present simulations of effective soft x-ray light output at the sample.
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