J. Victory, Zeqin Zhu, Q. Zhou, Wei-Shan Wu, G. Gildenblat, Zhixin Yan, J. Cordovez, C. McAndrew, F. Anderson, J. Paasschens, R. V. Langevelde, P. Kolev, R. Cherne, C. Yao
{"title":"基于psp的可扩展MOS变容管模型","authors":"J. Victory, Zeqin Zhu, Q. Zhou, Wei-Shan Wu, G. Gildenblat, Zhixin Yan, J. Cordovez, C. McAndrew, F. Anderson, J. Paasschens, R. V. Langevelde, P. Kolev, R. Cherne, C. Yao","doi":"10.1109/CICC.2007.4405780","DOIUrl":null,"url":null,"abstract":"A physically based scalable model for MOS Varactors is presented. The model includes a PSP-based analytical surface potential charge formulation, MOS varactor specific gate current models, and physical geometry and process parameter based parasitic modeling. Key device performances of capacitance and quality factor Q are validated over voltage, frequency, and geometry, for several technologies. The model, implemented in Verilog-A, provides robust and accurate RF simulation of MOS varactors. A VCO design application is detailed.","PeriodicalId":130106,"journal":{"name":"2007 IEEE Custom Integrated Circuits Conference","volume":"136 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"PSP-Based Scalable MOS Varactor Model\",\"authors\":\"J. Victory, Zeqin Zhu, Q. Zhou, Wei-Shan Wu, G. Gildenblat, Zhixin Yan, J. Cordovez, C. McAndrew, F. Anderson, J. Paasschens, R. V. Langevelde, P. Kolev, R. Cherne, C. Yao\",\"doi\":\"10.1109/CICC.2007.4405780\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A physically based scalable model for MOS Varactors is presented. The model includes a PSP-based analytical surface potential charge formulation, MOS varactor specific gate current models, and physical geometry and process parameter based parasitic modeling. Key device performances of capacitance and quality factor Q are validated over voltage, frequency, and geometry, for several technologies. The model, implemented in Verilog-A, provides robust and accurate RF simulation of MOS varactors. A VCO design application is detailed.\",\"PeriodicalId\":130106,\"journal\":{\"name\":\"2007 IEEE Custom Integrated Circuits Conference\",\"volume\":\"136 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2007.4405780\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2007.4405780","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A physically based scalable model for MOS Varactors is presented. The model includes a PSP-based analytical surface potential charge formulation, MOS varactor specific gate current models, and physical geometry and process parameter based parasitic modeling. Key device performances of capacitance and quality factor Q are validated over voltage, frequency, and geometry, for several technologies. The model, implemented in Verilog-A, provides robust and accurate RF simulation of MOS varactors. A VCO design application is detailed.
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