基于集成电路超材料特性的硅基0.450-0.475 THz串联馈电双介质谐振器片上天线阵列

M. Alibakhshikenari, B. Virdee, C. See, R. Abd‐Alhameed, F. Falcone, E. Limiti
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引用次数: 19

摘要

设计工作频率超过0.450-0.475太赫兹的天线阵列包括两个介质谐振器(dr),它们彼此垂直堆叠在一起,并放置在使用标准CMOS技术在硅衬底上制造的槽天线表面。在硅衬底上产生的槽是蜿蜒的,并被金属过孔壁包围,以防止能量耗散。该天线在0.4625 THz时的最大增益为4.5dBi,辐射效率为45.7%。槽和过孔的组合将天线转换为提供相对较小天线足迹的超材料结构。所提出的串联馈电双dr片上天线阵列可用于太赫兹集成电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Silicon-Based 0.450-0.475 THz Series-Fed Double Dielectric Resonator On-Chip Antenna Array Based on Metamaterial Properties for Integrated-Circuits
The antenna array designed to operate over 0.450-0.475 Terahertz comprises two dielectric resonators (DRs) that are stacked vertically on top of each other and placed on the surface of the slot antenna fabricated on a silicon substrate using standard CMOS technology. The slot created in the silicon substrate is meandering and is surrounded by metallic via-wall to prevent energy dissipation. The antenna has a maximum gain of 4.5dBi and radiation efficiency of 45.7% at 0.4625 THz. The combination of slot and vias transform the antenna to a metamaterial structure that provides a relatively small antenna footprint. The proposed series-fed double DRs on-chip antenna array is useful for applications in THz integrated circuits.
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