具有单量子点有源层的边缘发射微激光器

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882326

S. Rennon, K. Avary, F. Klopf, A. Wolf, M. Emmerling, J. Reithmaier, A. Forchel

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引用次数: 0

摘要

我们在深蚀刻DBR反射镜的GaInAs-AlGaAs量子点激光结构上实现了边缘发射微激光器。腔长为40 /spl mu/m的激光器在室温下连续工作，阈值电流低于4 mA。从980 nm基态发射的40 /spl μ m长激光器的连续波输出功率超过5 mW。

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Edge-emitting microlasers with a single quantum dot active layer

We have realized edge emitting microlasers on a GaInAs-AlGaAs quantum dot laser structure with deeply etched DBR mirrors. Lasers with 40 /spl mu/m cavity length show CW operation at room temperature, exhibiting threshold currents below 4 mA. CW output powers exceed 5 mW for 40 /spl mu/m long lasers emitting from the ground state at 980 nm.

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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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