{"title":"SiC肖特基和硅结二极管反向恢复对升压变换器的影响","authors":"V. Galigekere, M. Kazimierczuk","doi":"10.1109/EEIC.2007.4562634","DOIUrl":null,"url":null,"abstract":"The effect of diode reverse recovery on the performance of a pulse-width modulated (PWM) dc-dc boost converter employed for active power- factor correction (PFC) is analyzed. A 250 W boost converter is designed as per the requirements of a power-factor-corrector circuit and simulated using PSPICE. The effect of the diode reverse-recovery current on the MOSFET, employed as the switch in boost PFC circuit, is analyzed and depicted by the aid of simulated waveforms. The performance of three similarly rated diodes: CSD100600 silicon carbide Schottky diode, ultra-fast recovery silicon junction diode MUR1S60, and soft-recovery silicon junction diode MSR860 are compared and the simulation results are presented.","PeriodicalId":152045,"journal":{"name":"2007 Electrical Insulation Conference and Electrical Manufacturing Expo","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Effect of SiC schottky and Si junction diode reverse recovery on boost converter\",\"authors\":\"V. Galigekere, M. Kazimierczuk\",\"doi\":\"10.1109/EEIC.2007.4562634\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of diode reverse recovery on the performance of a pulse-width modulated (PWM) dc-dc boost converter employed for active power- factor correction (PFC) is analyzed. A 250 W boost converter is designed as per the requirements of a power-factor-corrector circuit and simulated using PSPICE. The effect of the diode reverse-recovery current on the MOSFET, employed as the switch in boost PFC circuit, is analyzed and depicted by the aid of simulated waveforms. The performance of three similarly rated diodes: CSD100600 silicon carbide Schottky diode, ultra-fast recovery silicon junction diode MUR1S60, and soft-recovery silicon junction diode MSR860 are compared and the simulation results are presented.\",\"PeriodicalId\":152045,\"journal\":{\"name\":\"2007 Electrical Insulation Conference and Electrical Manufacturing Expo\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Electrical Insulation Conference and Electrical Manufacturing Expo\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EEIC.2007.4562634\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Electrical Insulation Conference and Electrical Manufacturing Expo","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EEIC.2007.4562634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of SiC schottky and Si junction diode reverse recovery on boost converter
The effect of diode reverse recovery on the performance of a pulse-width modulated (PWM) dc-dc boost converter employed for active power- factor correction (PFC) is analyzed. A 250 W boost converter is designed as per the requirements of a power-factor-corrector circuit and simulated using PSPICE. The effect of the diode reverse-recovery current on the MOSFET, employed as the switch in boost PFC circuit, is analyzed and depicted by the aid of simulated waveforms. The performance of three similarly rated diodes: CSD100600 silicon carbide Schottky diode, ultra-fast recovery silicon junction diode MUR1S60, and soft-recovery silicon junction diode MSR860 are compared and the simulation results are presented.