SiC肖特基和硅结二极管反向恢复对升压变换器的影响

V. Galigekere, M. Kazimierczuk
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引用次数: 10

摘要

分析了二极管反向恢复对用于有源功率因数校正(PFC)的脉宽调制(PWM) dc-dc升压转换器性能的影响。根据功率因数校正电路的要求设计了250w升压变换器,并利用PSPICE进行了仿真。利用仿真波形分析和描述了二极管反向恢复电流对升压PFC电路中作为开关的MOSFET的影响。比较了CSD100600型碳化硅肖特基二极管、超快速恢复型硅结二极管MUR1S60和软恢复型硅结二极管MSR860的性能,并给出了仿真结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of SiC schottky and Si junction diode reverse recovery on boost converter
The effect of diode reverse recovery on the performance of a pulse-width modulated (PWM) dc-dc boost converter employed for active power- factor correction (PFC) is analyzed. A 250 W boost converter is designed as per the requirements of a power-factor-corrector circuit and simulated using PSPICE. The effect of the diode reverse-recovery current on the MOSFET, employed as the switch in boost PFC circuit, is analyzed and depicted by the aid of simulated waveforms. The performance of three similarly rated diodes: CSD100600 silicon carbide Schottky diode, ultra-fast recovery silicon junction diode MUR1S60, and soft-recovery silicon junction diode MSR860 are compared and the simulation results are presented.
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