{"title":"PIN二极管击穿电压以下大且长电流脉冲的观察","authors":"I. Takata","doi":"10.1109/ISPSD.1996.509476","DOIUrl":null,"url":null,"abstract":"PIN diodes with high resistive n-layer exhibit very interesting pulses, whose lengths are 10 /spl mu/s-2 s and heights are 0.001/spl sim/0.25 A/cm/sup 2/ below and above the avalanche breakdown voltage (/spl ap/1400 V). Especially, large pulses (0.1/spl sim/0.25 A/cm/sup 2/) occurred at /spl ap/100 V lower voltage than the avalanche breakdown. In these operations, breakdown currents prefer some discrete values not depending on the applied voltage directly. To consider these phenomena, the author proposes a new idea that there was a stable high current density operation (1A/cm/sup 2/ order) near the avalanche breakdown voltage.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An observation of large and long current pulses below the breakdown voltage of PIN diode\",\"authors\":\"I. Takata\",\"doi\":\"10.1109/ISPSD.1996.509476\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"PIN diodes with high resistive n-layer exhibit very interesting pulses, whose lengths are 10 /spl mu/s-2 s and heights are 0.001/spl sim/0.25 A/cm/sup 2/ below and above the avalanche breakdown voltage (/spl ap/1400 V). Especially, large pulses (0.1/spl sim/0.25 A/cm/sup 2/) occurred at /spl ap/100 V lower voltage than the avalanche breakdown. In these operations, breakdown currents prefer some discrete values not depending on the applied voltage directly. To consider these phenomena, the author proposes a new idea that there was a stable high current density operation (1A/cm/sup 2/ order) near the avalanche breakdown voltage.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509476\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509476","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An observation of large and long current pulses below the breakdown voltage of PIN diode
PIN diodes with high resistive n-layer exhibit very interesting pulses, whose lengths are 10 /spl mu/s-2 s and heights are 0.001/spl sim/0.25 A/cm/sup 2/ below and above the avalanche breakdown voltage (/spl ap/1400 V). Especially, large pulses (0.1/spl sim/0.25 A/cm/sup 2/) occurred at /spl ap/100 V lower voltage than the avalanche breakdown. In these operations, breakdown currents prefer some discrete values not depending on the applied voltage directly. To consider these phenomena, the author proposes a new idea that there was a stable high current density operation (1A/cm/sup 2/ order) near the avalanche breakdown voltage.