PLD法制备TCO层用ZnO-Y2O3 (YZO)薄膜的结构、光学和电学性能研究

INTERNATIONAL CONFERENCE ON INVENTIVE MATERIAL SCIENCE APPLICATIONS : ICIMA 2019 Pub Date : 2019-10-25 DOI:10.1063/1.5131610

A. Youvanidha, B. Vidhya, P. Nelson, R. Kannan, S. Babu

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引用次数: 6

摘要

氧化锌是一种突出的宽带隙材料，具有可观的透明度，广泛应用于透明导电氧化物。然而，在氧化锌上掺杂金属以调节其电学性能的报道被广泛研究。本文主要研究了以不同浓度的Y2O3(0-5%)作为ZnO掺杂剂的脉冲激光沉积ZnO-Y2O3 (YZO)薄膜。YZO薄膜的x射线衍射谱显示出沿(002)平面优先取向的六方纤锌矿结构的存在。x射线衍射(XRD)结果表明，膜的M形貌在2 wt%前呈均匀分布，随着Y2O3质量分数的增加，膜的晶粒长势有所增强。采用紫外可见光谱法研究了Y2O3浓度对ZnO透光率的影响。沉积膜的电阻率为~ 10−4，这与早期报道的适用于TCO应用的电阻率相当。氧化锌是一种突出的宽带隙材料，具有可观的透明度，广泛应用于透明导电氧化物。然而，在氧化锌上掺杂金属以调节其电学性能的报道被广泛研究。本文主要研究了以不同浓度的Y2O3(0-5%)作为ZnO掺杂剂的脉冲激光沉积ZnO-Y2O3 (YZO)薄膜。YZO薄膜的x射线衍射谱显示出沿(002)平面优先取向的六方纤锌矿结构的存在。x射线衍射(XRD)结果表明，膜的M形貌在2 wt%前呈均匀分布，随着Y2O3质量分数的增加，膜的晶粒长势有所增强。采用紫外可见光谱法研究了Y2O3浓度对ZnO透光率的影响。沉积膜的电阻率为~ 10−4，这与早期报道的适用于TCO应用的电阻率相当。

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Investigation on the structural, optical and electrical properties of ZnO-Y2O3 (YZO) thin films prepared by PLD for TCO layer applications

Zinc Oxide is a prominent wide bandgap material with an appreciable transparency which is widely utilized in transparent conducting oxide applications. However, metal doping on ZnO reports were extensively investigated for tuning the electrical p roperties. This article is focused on pulsed laser deposition of ZnO-Y2O3 (YZO) thin films with various concentrations of Y2O3 (0-5%) as a dopant in ZnO. X-ray diffraction spectrum of the YZO thin films exhibit s the presence of hexagonal wurtzite structure with a preferential orientation along the (002) plane. M orphology aspects of the film abides with XRD results which shown a uniform distribution till 2 wt% and displayed a gain in grain growth with increasing wt% of Y2O3. The influence of Y2O3 concentration on the optical transmittance of ZnO is investigated by Uv- Vis spectroscopy. The electrical resistivity of the deposited films is in the order ∼10−4 which was on par with the earlier reports suitable for TCO applications.Zinc Oxide is a prominent wide bandgap material with an appreciable transparency which is widely utilized in transparent conducting oxide applications. However, metal doping on ZnO reports were extensively investigated for tuning the electrical p roperties. This article is focused on pulsed laser deposition of ZnO-Y2O3 (YZO) thin films with various concentrations of Y2O3 (0-5%) as a dopant in ZnO. X-ray diffraction spectrum of the YZO thin films exhibit s the presence of hexagonal wurtzite structure with a preferential orientation along the (002) plane. M orphology aspects of the film abides with XRD results which shown a uniform distribution till 2 wt% and displayed a gain in grain growth with increasing wt% of Y2O3. The influence of Y2O3 concentration on the optical transmittance of ZnO is investigated by Uv- Vis spectroscopy. The electrical resistivity of the deposited films is in the order ∼10−4 which was on par with the earlier reports suitable for TCO applications.

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INTERNATIONAL CONFERENCE ON INVENTIVE MATERIAL SCIENCE APPLICATIONS : ICIMA 2019

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