在器件-电路-版图协同优化中加入缺失的时变版图依赖——版图依赖老化效应的新发现

P. Ren, Xiaoqing Xu, P. Hao, Junyao Wang, Runsheng Wang, Ming Li, Jianping Wang, Weihai Bu, Jingang Wu, W. Wong, Shaofeng Yu, Hanming Wu, Shiuh-Wuu Lee, D. Pan, Ru Huang
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引用次数: 13

摘要

本文首次报道了一类新的布局依赖效应(LDE)——由器件老化引起的时间依赖布局依赖效应。实验发现,在相同的应力条件下,纳米级HKMG器件中的BTI和HCI的降解对布局结构很敏感,甚至存在偏差。这种布局相关老化(LDA)的新效应会严重干扰电路设计,传统的电路设计只包括为时间零性能建模的静态LDA。在电路层面的进一步研究表明,对于弹性器件-电路-布局协同设计,特别是为了确保在寿命结束时有足够的设计余量,LDA是不可忽视的。研究结果有助于指导跨层技术/设计协同优化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Adding the missing time-dependent layout dependency into device-circuit-layout co-optimization - New findings on the layout dependent aging effects
In this paper, a new class of layout dependent effects (LDE)-the time-dependent layout dependency due to device aging, is reported for the first time. The BTI and HCI degradation in nanoscale HKMG devices are experimentally found to be sensitive to layout configurations, even biased at the same stress condition. This new effect of layout dependent aging (LDA) can significantly mess the circuit design, which conventionally only includes the static LDE modeled for time-zero performance. Further studies at circuit level indicate that, for resilient device-circuit-layout co-design, especially to ensure enough design margin near the end of life, LDA cannot be neglected. The results are helpful to guide the cross-layer technology/design co-optimization.
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