一种基于选择性使用施密特触发逻辑的抗噪声亚阈值电路设计

M. Donato, Fabio Cremona, Warren Jin, R. I. Bahar, W. Patterson, A. Zaslavsky, J. Mundy
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引用次数: 15

摘要

工作在亚阈值电压下的纳米电路受到随机电报信号(RTS)和热噪声的影响。考虑到低工作电压和随后较低的噪声裕度,这些噪声现象能够改变电路中一些节点的值,从而影响计算的可靠性。我们提出了一种基于现有不变关系的电路选择性应用前馈强化来提高噪声容忍度的方法。作为强化机制,我们使用了基于施密特触发电路的标准CMOS门的改进。SPICE模拟表明,我们的解决方案具有比标准CMOS和全增强电路更好的抗噪性,并且面积和功耗有限。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A noise-immune sub-threshold circuit design based on selective use of Schmitt-trigger logic
Nanoscale circuits operating at sub-threshold voltages are affected by growing impact of random telegraph signal (RTS) and thermal noise. Given the low operational voltages and subsequently lower noise margins, these noise phenomena are capable of changing the value of some of the nodes in the circuit, compromising the reliability of the computation. We propose a method for improving noise-tolerance by selectively applying feed-forward reinforcement to circuits based on use of existing invariant relationships. As reinforcement mechanism, we used a modification of the standard CMOS gates based on the Schmitt trigger circuit. SPICE simulations show our solution offers better noise immunity than both standard CMOS and fully reinforced circuits, with limited area and power overhead.
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