电迁移和应力影响Cu-Sn二元合金的IMC生长动力学

V. Shtegman, A. Morozov, A. Freidin, W. Müller
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引用次数: 0

摘要

基于小应变近似下的化学亲和张量的概念,研究了化学反应的电迁移和应力影响动力学的分析模型。应力的影响是通过它们对化学亲和张量的影响来解释的,而化学亲和张量是反应前沿速度所依赖的。电迁移被认为是扩散组分总通量中的附加总和。平均故障间隔时间(MTTF)是基于布莱克方程估计的。然后计算了IMC层的临界厚度,并提出了表征电迁移增强扩散引起的空位积累的无量纲参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electromigration and stress affected kinetics of IMC growth of binary Cu-Sn couple
An analytical model of electromigration and stress affected kinetics of a chemical reaction is investigated based on the notion of the chemical affinity tensor within the small strain approximation. Effects of stresses are accounted for through their influence on the chemical affinity tensor on which the reaction front velocity depends. Electromigration is considered as an additional summand in the total flux of the diffusive constituents. The Mean-Time-To-Failure (MTTF) is estimated based on Black's equation. Then the critical thickness of the IMC layer is calculated and a dimensionless parameter, which characterizes the accumulation of vacancies due to electromigration enhanced diffusion is proposed.
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