亚半微米LDD MOSFET重叠电容的闭合模型

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194517

V. Koldyaev, L. Deferm

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引用次数: 1

摘要

提出了一种精确的重叠电容闭合模型。对于非矩形几何结构，将MOSFET的w部空间电荷区分解为内边缘效应和平行板效应分量。考虑了三板接近效应和二维效应。计算结果与实测结果吻合良好。

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Closed-form model of the subhalfmicrometer LDD MOSFET overlap capacitance

An accurate closed1orm model of the overlap capacitance is presented. The space charge region at the WD-part of a MOSFET is decomposed into the inner fringing and parallel plate effect components for the non rectangular geometry. The third plate proximity effect and 2D-effects are taken into account. Good agreement between calculated and measured characteristics is fOUnd.

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来源期刊

27th European Solid-State Device Research Conference

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