无电荷平衡电路的双极刺激植入式刺激器

Hosung Chun, T. Lehmann, Yuanyuan Yang
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引用次数: 23

摘要

在采用双相电流脉冲的神经刺激中,维持电荷平衡至关重要。双相电流脉冲的任何失配都会导致电荷不平衡,可能导致组织损伤。在本文中,我们提出了一种可植入的双相刺激器,以减少双相电流脉冲的失配,而不需要直流阻塞电容器或电荷平衡电路。采用0.35μ v HV CMOS工艺,在20V电源条件下,在1mA满标电流下,阴极和阳极电流最大失配小于0.4μA。(相当于1mA时的11位精度)在使能短路的情况下,在3ms周期内每个阴极和阳极相0.1ms的刺激下,实现了小于1nA的剩余直流电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Implantable stimulator for bipolar stimulation without charge balancing circuits
It is critically important to maintain charge balance in neural stimulation, employing biphasic current pulses. Any mismatch in biphasic current pulses will result in charge imbalance, possibly leading to tissue damage. In this paper, we propose an implantable stimulator for bipolar stimulation to minimize the mismatch of biphasic current pulses, without dc blocking capacitors or charge balancing circuits. Using 0.35μm HV CMOS process with 20V power supply, the maximum mismatch between cathodic and anodic current is achieved less than 0.4μA out of full scale current of 1mA. (equivalent to 11 bit accuracy at 1mA) Residual dc current of less than 1nA is achieved with shorting enabled, under 0.1ms stimulation for each cathodic and anodic phase out of 3ms period.
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