{"title":"用于2.45 GHz ISM频段的高效谐波调谐GaN HEMT功率放大器","authors":"Marcin Góralczyk","doi":"10.23919/MIKON.2018.8404994","DOIUrl":null,"url":null,"abstract":"This paper presents a design of highly efficient high power amplifier with CGH40010 transistor. The amplifier provides more than 15W of output power and 61% PAE over a 2.4 GHz to 2.5 GHz frequency range. A method of harmonic tuning is applied in the design. By the use of this method it was possible to achieve even 30% more power than the transistor is specified to deliver, while maintaining high gain and efficiency.","PeriodicalId":143491,"journal":{"name":"2018 22nd International Microwave and Radar Conference (MIKON)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Highly efficient harmonic-tuned GaN HEMT power amplifier for a 2.45 GHz ISM band\",\"authors\":\"Marcin Góralczyk\",\"doi\":\"10.23919/MIKON.2018.8404994\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a design of highly efficient high power amplifier with CGH40010 transistor. The amplifier provides more than 15W of output power and 61% PAE over a 2.4 GHz to 2.5 GHz frequency range. A method of harmonic tuning is applied in the design. By the use of this method it was possible to achieve even 30% more power than the transistor is specified to deliver, while maintaining high gain and efficiency.\",\"PeriodicalId\":143491,\"journal\":{\"name\":\"2018 22nd International Microwave and Radar Conference (MIKON)\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 22nd International Microwave and Radar Conference (MIKON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/MIKON.2018.8404994\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 22nd International Microwave and Radar Conference (MIKON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIKON.2018.8404994","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly efficient harmonic-tuned GaN HEMT power amplifier for a 2.45 GHz ISM band
This paper presents a design of highly efficient high power amplifier with CGH40010 transistor. The amplifier provides more than 15W of output power and 61% PAE over a 2.4 GHz to 2.5 GHz frequency range. A method of harmonic tuning is applied in the design. By the use of this method it was possible to achieve even 30% more power than the transistor is specified to deliver, while maintaining high gain and efficiency.