{"title":"0.13 μm SiGe BiCMOS中60 ghz LNA的设计","authors":"Leijun Xu, Zhigong Wang, Jun Xia, Yan Zhao","doi":"10.1109/GSMM.2008.4534630","DOIUrl":null,"url":null,"abstract":"This paper presents the design of the matching network of a 60-GHz high-gain LNA. Through analyzing commonly used structure, a simplified input matching network was designed and an inter-stage matching network was proposed to improve gain and reduce noise. Simulated in 0.13-μm SiGe BiCMOS technology, the LNA provides a gain of 20 dB with a noise figure of 5 dB while consuming 3 mA from a 2.5-V supply.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design of 60-GHz LNA in 0.13-μm SiGe BiCMOS\",\"authors\":\"Leijun Xu, Zhigong Wang, Jun Xia, Yan Zhao\",\"doi\":\"10.1109/GSMM.2008.4534630\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of the matching network of a 60-GHz high-gain LNA. Through analyzing commonly used structure, a simplified input matching network was designed and an inter-stage matching network was proposed to improve gain and reduce noise. Simulated in 0.13-μm SiGe BiCMOS technology, the LNA provides a gain of 20 dB with a noise figure of 5 dB while consuming 3 mA from a 2.5-V supply.\",\"PeriodicalId\":304483,\"journal\":{\"name\":\"2008 Global Symposium on Millimeter Waves\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-05-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 Global Symposium on Millimeter Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GSMM.2008.4534630\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Global Symposium on Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GSMM.2008.4534630","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents the design of the matching network of a 60-GHz high-gain LNA. Through analyzing commonly used structure, a simplified input matching network was designed and an inter-stage matching network was proposed to improve gain and reduce noise. Simulated in 0.13-μm SiGe BiCMOS technology, the LNA provides a gain of 20 dB with a noise figure of 5 dB while consuming 3 mA from a 2.5-V supply.
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