场辅助扩散定向耦合器耦合区离子损耗补偿技术

Daniel Uebach, Thomas Kühler, E. Griese
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引用次数: 0

摘要

场辅助扩散工艺是光电印刷电路板(eopcb)中用于双向芯片对芯片通信的集成定向耦合器的常用制造技术[1]。由于离子耗尽发生在两个波导相互接近的区域,由于叠加场,介绍了两种技术来补偿这种离子耗尽。然后将这两种方法作为集成定向耦合器的优化设计方法进行了研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Techniques to Compensate Ion Depletion in the Coupling Region of Directional Couplers Manufactured by Field-Assisted Diffusion
The field-assisted diffusion process is the commonly utilized manufacturing technology for fabricating integrated directional couplers that are used for bidirectional chip-to-chip communication in Electro-Optical Printed Circuit Boards (EOPCBs) [1]. Since an ion depletion occurs in regions where two waveguides approach each other due to superimposed fields, two techniques to compensate this ion depletion are introduced. Both methods are then investigated as an optimization approach for the design of an integrated directional coupler.
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