Vinay Doki, Alamelu Sunder, D. Shenoy, D. Venkataramana
{"title":"x波段TTC接收机两级LNA的设计与实现","authors":"Vinay Doki, Alamelu Sunder, D. Shenoy, D. Venkataramana","doi":"10.1109/ICAIT47043.2019.8987327","DOIUrl":null,"url":null,"abstract":"This paper describes the design and realization of a two stage low noise amplifier (LNA) centered at 7.2GHz with a bandwidth of 100MHz for X-Band Coherent Tracking, Telemetry and Command Receiver (TTC).Interstage matching network has been optimized to get optimum noise figure of 1.9dB with a flatness of 0.3dB and input return loss of better than 10 dB. Output return loss is better than 10dB have been achieved with a overall gain of 26dB over 100MHz bandwidth. The design is carried out with microwave simulation software. LNA has been realized on 25 mil thickness RTDuroid6010substrate with Er=10.2, using Silicon germanium based hetero junction bipolar junction transistor (HBT) as active device and surface mount type passive components. The measured results were found to be closely matching with the simulation results.","PeriodicalId":221994,"journal":{"name":"2019 1st International Conference on Advances in Information Technology (ICAIT)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Realization of two stage LNA for X-Band TTC Receiver\",\"authors\":\"Vinay Doki, Alamelu Sunder, D. Shenoy, D. Venkataramana\",\"doi\":\"10.1109/ICAIT47043.2019.8987327\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design and realization of a two stage low noise amplifier (LNA) centered at 7.2GHz with a bandwidth of 100MHz for X-Band Coherent Tracking, Telemetry and Command Receiver (TTC).Interstage matching network has been optimized to get optimum noise figure of 1.9dB with a flatness of 0.3dB and input return loss of better than 10 dB. Output return loss is better than 10dB have been achieved with a overall gain of 26dB over 100MHz bandwidth. The design is carried out with microwave simulation software. LNA has been realized on 25 mil thickness RTDuroid6010substrate with Er=10.2, using Silicon germanium based hetero junction bipolar junction transistor (HBT) as active device and surface mount type passive components. The measured results were found to be closely matching with the simulation results.\",\"PeriodicalId\":221994,\"journal\":{\"name\":\"2019 1st International Conference on Advances in Information Technology (ICAIT)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 1st International Conference on Advances in Information Technology (ICAIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICAIT47043.2019.8987327\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 1st International Conference on Advances in Information Technology (ICAIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAIT47043.2019.8987327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and Realization of two stage LNA for X-Band TTC Receiver
This paper describes the design and realization of a two stage low noise amplifier (LNA) centered at 7.2GHz with a bandwidth of 100MHz for X-Band Coherent Tracking, Telemetry and Command Receiver (TTC).Interstage matching network has been optimized to get optimum noise figure of 1.9dB with a flatness of 0.3dB and input return loss of better than 10 dB. Output return loss is better than 10dB have been achieved with a overall gain of 26dB over 100MHz bandwidth. The design is carried out with microwave simulation software. LNA has been realized on 25 mil thickness RTDuroid6010substrate with Er=10.2, using Silicon germanium based hetero junction bipolar junction transistor (HBT) as active device and surface mount type passive components. The measured results were found to be closely matching with the simulation results.