{"title":"0.13µm CMOS功率放大器，用于无线传感器网络应用","authors":"Anran Shao, Zhiqun Li, Chuanchuan Wan","doi":"10.1109/WOCC.2010.5510676","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a Class AB power amplifier (PA) for 2.4–2.4835GHz Wireless Sensor Network (WSN) system in 0.13µm CMOS technology. The PA adopts the single-stage differential structure and the output power of the PA can be controlled by switching the sizes of transistors. The proposed PA achieves a power added efficiency (PAE) of 25.34% while delivering an output power of 7.92dBm with an input power of −9.08dBm at 1dB compression point. The simulated maximum power gain is 18.09dB. With a DC voltage supply of 1.2V, the power consumption is 22.0mW. The layout size is 960×1120µm2.","PeriodicalId":427398,"journal":{"name":"The 19th Annual Wireless and Optical Communications Conference (WOCC 2010)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"0.13µm CMOS power amplifier for Wireless Sensor Network applications\",\"authors\":\"Anran Shao, Zhiqun Li, Chuanchuan Wan\",\"doi\":\"10.1109/WOCC.2010.5510676\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of a Class AB power amplifier (PA) for 2.4–2.4835GHz Wireless Sensor Network (WSN) system in 0.13µm CMOS technology. The PA adopts the single-stage differential structure and the output power of the PA can be controlled by switching the sizes of transistors. The proposed PA achieves a power added efficiency (PAE) of 25.34% while delivering an output power of 7.92dBm with an input power of −9.08dBm at 1dB compression point. The simulated maximum power gain is 18.09dB. With a DC voltage supply of 1.2V, the power consumption is 22.0mW. The layout size is 960×1120µm2.\",\"PeriodicalId\":427398,\"journal\":{\"name\":\"The 19th Annual Wireless and Optical Communications Conference (WOCC 2010)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 19th Annual Wireless and Optical Communications Conference (WOCC 2010)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOCC.2010.5510676\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 19th Annual Wireless and Optical Communications Conference (WOCC 2010)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOCC.2010.5510676","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
0.13µm CMOS power amplifier for Wireless Sensor Network applications
This paper presents the design of a Class AB power amplifier (PA) for 2.4–2.4835GHz Wireless Sensor Network (WSN) system in 0.13µm CMOS technology. The PA adopts the single-stage differential structure and the output power of the PA can be controlled by switching the sizes of transistors. The proposed PA achieves a power added efficiency (PAE) of 25.34% while delivering an output power of 7.92dBm with an input power of −9.08dBm at 1dB compression point. The simulated maximum power gain is 18.09dB. With a DC voltage supply of 1.2V, the power consumption is 22.0mW. The layout size is 960×1120µm2.
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