分形表面电子场发射的数值模拟

Proceedings International University Conference 'Electronics and Radiophysics of Ultra-High Frequencies' (Cat. No.99EX356) Pub Date : 1999-05-24 DOI:10.1109/UHF.1999.787946

M. V. Eliseev, O. B. Isayeva, A. G. Rozhnev, N. Ryskin

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引用次数: 0

摘要

具有较弱场发射能力的材料在真空微电子学中具有重要意义。从我们的观点来看，考虑到发射极表面的分形结构，可以给出如此低的发射电压及其非均匀性的最现实的解释。也就是说，在发射极上存在自相似的微不规则，静电场在其上反复放大。本文给出了分形表面电子发射的数值模拟。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Numerical simulation of electron field emission from fractal surface

Materials possessing significant emission ability in rather weak fields have great importance for vacuum microelectronics. From our point of view, the most realistic explanation of so low voltage required for emission, and its non-uniform character, can be given taking into account fractal structure of emitter surface. In other words, there are self-similar micro-irregularities on the emitter, on which repeated amplification of electrostatic field takes place. In this paper, we present a numerical simulation of electron emission from fractal surfaces.

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Proceedings International University Conference 'Electronics and Radiophysics of Ultra-High Frequencies' (Cat. No.99EX356)

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