{"title":"1-V 13ghz超低噪声放大器,用于90纳米CMOS片上系统辐射计","authors":"A. Fonte, D. Zito","doi":"10.1109/RME.2007.4401806","DOIUrl":null,"url":null,"abstract":"An ultra-low noise amplifier (LNA) of a fully integrated microwave radiometer on silicon at 13 GHz for the civil and environmental safeguard is presented. The LNA represents the front-end stage of the radiometric sensor, which consists of an ultra-low noise receiver characterized by high performance in terms of sensitivity and gain stability. The LNA is realized by means of two cascode stages coupled each other by a transformer-based inter-stage matching network and provides differential outputs from single-ended input signal available from the antenna. The LNA exhibits a noise figure of 1.4 dB, a power gain of 20 dB and a power consumption of 12 mA with a supply voltage of 1 V, which represent one of the best set of performance among those presented in the literature.","PeriodicalId":118230,"journal":{"name":"2007 Ph.D Research in Microelectronics and Electronics Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1-V 13-GHz ultra low noise amplifier for system-on-a-chip radiometer in CMOS 90 nm\",\"authors\":\"A. Fonte, D. Zito\",\"doi\":\"10.1109/RME.2007.4401806\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An ultra-low noise amplifier (LNA) of a fully integrated microwave radiometer on silicon at 13 GHz for the civil and environmental safeguard is presented. The LNA represents the front-end stage of the radiometric sensor, which consists of an ultra-low noise receiver characterized by high performance in terms of sensitivity and gain stability. The LNA is realized by means of two cascode stages coupled each other by a transformer-based inter-stage matching network and provides differential outputs from single-ended input signal available from the antenna. The LNA exhibits a noise figure of 1.4 dB, a power gain of 20 dB and a power consumption of 12 mA with a supply voltage of 1 V, which represent one of the best set of performance among those presented in the literature.\",\"PeriodicalId\":118230,\"journal\":{\"name\":\"2007 Ph.D Research in Microelectronics and Electronics Conference\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Ph.D Research in Microelectronics and Electronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RME.2007.4401806\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Ph.D Research in Microelectronics and Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RME.2007.4401806","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
1-V 13-GHz ultra low noise amplifier for system-on-a-chip radiometer in CMOS 90 nm
An ultra-low noise amplifier (LNA) of a fully integrated microwave radiometer on silicon at 13 GHz for the civil and environmental safeguard is presented. The LNA represents the front-end stage of the radiometric sensor, which consists of an ultra-low noise receiver characterized by high performance in terms of sensitivity and gain stability. The LNA is realized by means of two cascode stages coupled each other by a transformer-based inter-stage matching network and provides differential outputs from single-ended input signal available from the antenna. The LNA exhibits a noise figure of 1.4 dB, a power gain of 20 dB and a power consumption of 12 mA with a supply voltage of 1 V, which represent one of the best set of performance among those presented in the literature.