{"title":"内容可寻址存储器的内置自我修复技术","authors":"Guan-Quan Lin, Zhen-Yu Wang, Shyue-Kung Lu","doi":"10.1109/VDAT.2009.5158146","DOIUrl":null,"url":null,"abstract":"In this paper, we propose block-level replacement techniques for content-addressable memories. The CAM array is first divided into row banks and column banks. Then, for each divided array (the overlapped CAM cells of a row bank and a column bank), two redundant row blocks are added and reconfiguration is performed at the block level instead of the conventional word level. According to simulation results, the hardware overhead is 1.31% for a 1024 × 1024-bit CAM array. We also analyze the repair rates of our approaches. It is also found that our approach will achieve higher repair rates.","PeriodicalId":246670,"journal":{"name":"2009 International Symposium on VLSI Design, Automation and Test","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Built-in self-repair techniques for content addressable memories\",\"authors\":\"Guan-Quan Lin, Zhen-Yu Wang, Shyue-Kung Lu\",\"doi\":\"10.1109/VDAT.2009.5158146\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose block-level replacement techniques for content-addressable memories. The CAM array is first divided into row banks and column banks. Then, for each divided array (the overlapped CAM cells of a row bank and a column bank), two redundant row blocks are added and reconfiguration is performed at the block level instead of the conventional word level. According to simulation results, the hardware overhead is 1.31% for a 1024 × 1024-bit CAM array. We also analyze the repair rates of our approaches. It is also found that our approach will achieve higher repair rates.\",\"PeriodicalId\":246670,\"journal\":{\"name\":\"2009 International Symposium on VLSI Design, Automation and Test\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Symposium on VLSI Design, Automation and Test\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VDAT.2009.5158146\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Design, Automation and Test","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VDAT.2009.5158146","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Built-in self-repair techniques for content addressable memories
In this paper, we propose block-level replacement techniques for content-addressable memories. The CAM array is first divided into row banks and column banks. Then, for each divided array (the overlapped CAM cells of a row bank and a column bank), two redundant row blocks are added and reconfiguration is performed at the block level instead of the conventional word level. According to simulation results, the hardware overhead is 1.31% for a 1024 × 1024-bit CAM array. We also analyze the repair rates of our approaches. It is also found that our approach will achieve higher repair rates.