基于砷化镓的宽带0.25微米离子植入MMIC低噪声放大器

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1992-06-01 DOI:10.1109/MCS.1992.185988

J. Sanctuary, C. Woodin, J. Manning

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引用次数: 1

摘要

一种高度可制造的0.25 μ m离子注入工艺已被用于开发覆盖2-18 ghz频段的单片微波集成电路低噪声放大器(MMIC LNAs)。使用覆盖2-6 ghz和6-18 ghz频段的mmic，噪声值分别低于2.5 dB和3.0 dB。2-6 ghz设计的插入增益为16 dB, 6-18 ghz设计的插入增益为10 dB。这一性能可与高电子迁移率晶体管(HEMT)工艺相媲美

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Broadband 0.25 micron ion-implant MMIC low noise amplifiers on GaAs

A highly manufacturable 0.25- mu m ion-implant-process has been used for the development of monolithic microwave integrated circuit low-noise amplifiers (MMIC LNAs) covering the 2-18-GHz band. Noise figures of less than 2.5 dB and 3.0 dB have been achieved with MMICs covering the 2-6-GHz and 6-18-GHz bands, respectively. Insertion gains were 16 dB for the 2-6-GHz design and 10 dB for the 6-18-GHz design. This performance is comparable to that reported for high-electron-mobility-transistor (HEMT) processes.<>

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IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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