{"title":"双波段，宽入射角吸收器远红外和太赫兹频率","authors":"Woon-Gi Yeo, N. Nahar, K. Sertel","doi":"10.1109/NAECON.2012.6531019","DOIUrl":null,"url":null,"abstract":"We present an electrically thin, dual-band, perfect absorber design that can be scaled to operate in the far infrared (FIR) or THz band. A dual-polarization frequency selective surface (FSS) consisting of crossed dipoles is modified using additional parasitic tip metallizations to achieve dual-band performance. The conducting FSS layer is placed on a silicon carbide (SiC) substrate backed by a metallic ground. The structure is optimized for absorption efficiency over a wide incidence angle range for both transverse electric (TE) and transverse magnetic (TM) polarizations.","PeriodicalId":352567,"journal":{"name":"2012 IEEE National Aerospace and Electronics Conference (NAECON)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dual-band, Wide-incident-angle absorber for far-IR and THz frequencies\",\"authors\":\"Woon-Gi Yeo, N. Nahar, K. Sertel\",\"doi\":\"10.1109/NAECON.2012.6531019\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present an electrically thin, dual-band, perfect absorber design that can be scaled to operate in the far infrared (FIR) or THz band. A dual-polarization frequency selective surface (FSS) consisting of crossed dipoles is modified using additional parasitic tip metallizations to achieve dual-band performance. The conducting FSS layer is placed on a silicon carbide (SiC) substrate backed by a metallic ground. The structure is optimized for absorption efficiency over a wide incidence angle range for both transverse electric (TE) and transverse magnetic (TM) polarizations.\",\"PeriodicalId\":352567,\"journal\":{\"name\":\"2012 IEEE National Aerospace and Electronics Conference (NAECON)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-07-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE National Aerospace and Electronics Conference (NAECON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NAECON.2012.6531019\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE National Aerospace and Electronics Conference (NAECON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAECON.2012.6531019","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dual-band, Wide-incident-angle absorber for far-IR and THz frequencies
We present an electrically thin, dual-band, perfect absorber design that can be scaled to operate in the far infrared (FIR) or THz band. A dual-polarization frequency selective surface (FSS) consisting of crossed dipoles is modified using additional parasitic tip metallizations to achieve dual-band performance. The conducting FSS layer is placed on a silicon carbide (SiC) substrate backed by a metallic ground. The structure is optimized for absorption efficiency over a wide incidence angle range for both transverse electric (TE) and transverse magnetic (TM) polarizations.
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