高压LDMOS的功耗分析

2007 2nd IEEE Conference on Industrial Electronics and Applications Pub Date : 2007-05-23 DOI:10.1109/ICIEA.2007.4318536

Xiulong Wu, Junning Chen, Daoming Ke

{"title":"高压LDMOS的功耗分析","authors":"Xiulong Wu, Junning Chen, Daoming Ke","doi":"10.1109/ICIEA.2007.4318536","DOIUrl":null,"url":null,"abstract":"According to the high voltage LDMOS macromodel established in previous work, the inverter consists of LDMOS with high resistance drift region was analyzed. A formulation was presented to solve the power consumption of LDMOS power integrated circuits. The results are shown in good agreement with the simulation values by the two-dimensional numerical simulator MEDICI. Finally, a method to reduce circuit power consumption was presented.","PeriodicalId":231682,"journal":{"name":"2007 2nd IEEE Conference on Industrial Electronics and Applications","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of High Voltage LDMOS Power Consumption\",\"authors\":\"Xiulong Wu, Junning Chen, Daoming Ke\",\"doi\":\"10.1109/ICIEA.2007.4318536\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"According to the high voltage LDMOS macromodel established in previous work, the inverter consists of LDMOS with high resistance drift region was analyzed. A formulation was presented to solve the power consumption of LDMOS power integrated circuits. The results are shown in good agreement with the simulation values by the two-dimensional numerical simulator MEDICI. Finally, a method to reduce circuit power consumption was presented.\",\"PeriodicalId\":231682,\"journal\":{\"name\":\"2007 2nd IEEE Conference on Industrial Electronics and Applications\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 2nd IEEE Conference on Industrial Electronics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIEA.2007.4318536\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 2nd IEEE Conference on Industrial Electronics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIEA.2007.4318536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

根据前人建立的高压LDMOS宏观模型，分析了由具有高阻漂移区的LDMOS组成的逆变器。提出了一种解决LDMOS功率集成电路功耗的公式。结果与二维数值模拟器MEDICI的模拟值吻合较好。最后，提出了降低电路功耗的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Analysis of High Voltage LDMOS Power Consumption

According to the high voltage LDMOS macromodel established in previous work, the inverter consists of LDMOS with high resistance drift region was analyzed. A formulation was presented to solve the power consumption of LDMOS power integrated circuits. The results are shown in good agreement with the simulation values by the two-dimensional numerical simulator MEDICI. Finally, a method to reduce circuit power consumption was presented.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 2nd IEEE Conference on Industrial Electronics and Applications

自引率

0.00%

发文量