GaN器件的大信号建模，重点是捕获效应和热挑战(特邀)

2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2015-08-01 DOI:10.1109/RFIT.2015.7377941

F. Lin, Weiqiang Qian, Lei Li, Mehdi Khan

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引用次数: 0

摘要

本文将介绍基于Dynax GaN HEMT器件的大信号建模和PA设计的最新进展。采用改进的Angelov模型对脉冲I-V数据进行建模。将给出改进的模型结果，以解决捕获效应，并给出新的模型参数提取方法。该模型在商用EDA工具中实现，用于PA设计仿真。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Large-signal modeling of GaN devices with emphasis on trapping effect and thermal challenges (Invited)

This paper will present the recent development of large-signal modeling cum PA design based on Dynax GaN HEMT devices. A modified Angelov model is used to model the pulse I-V data. Improved modeling results to address the trapping effect will be given together with new model parameter extraction methodology. The model is implemented in a commercial EDA tools for PA design simulation.

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2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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